Two-dimensional time delay integration visible CMOS image sensor
US7923763B2 · kind B2 · utility
33Cited by
29References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2007 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jan 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two adjacent pinned photodiodes, and a plurality of readout nodes connected to the plurality of pinned photodiodes via address lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.