Semiconductor device including capacitorless RAM
US7923766B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jun 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4016
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel body region arranged in a first region comprising a first semiconductor (e.g., p-SiGe) having a given band gap and a second region comprising a second semiconductor (e.g., n-Si) having a larger band gap than the first semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.