MEMS sensor comprising a deformation-free back electrode
US7923792B2 · kind B2 · utility
2Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 10, 2007 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Aug 24, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0257
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An MEMS sensor constructed on a base chip and having a capacitive mode of operation is disclosed. The MEMS sensor has a patterned layer construction applied on the base chip. A cutout is produced in the layer construction, the moveable electrode, for example a membrane, being arranged in said cutout. The cutout is spanned by a covering layer, which bears on the layer construction around the cutout and comprises the back electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.