Microelectronic device patterned by ablating and subsequently sintering said microelectronic device
US7923837B2 · kind B2 · utility
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4References
12Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Sep 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering.Applicant respectfully submits that the above amendments bring the Abstract into compliance with MPEP §608.01 (b). Accordingly, Applicant respectfully requests reconsideration and withdrawal of the objection to the abstract.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.