Exposure mask and method of manufacturing a semiconductor device
US7927764B2 · kind B2 · utility
3Cited by
0References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 4, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Aug 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a film pattern includes forming a film over a substrate, applying a photoresist over the film, exposing the photoresist using a first mask pattern including a first mask opening and a second mask opening, and an optical proximity correction being applied only to the first mask opening, exposing the photoresist using a second mask pattern including a third mask opening and a fourth mask opening, an optical proximity correction being applied only to the fourth mask opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.