Pre-alignment marking and inspection to improve mask substrate defect tolerance
US7927766B2 · kind B2 · utility
9Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes determining defect types and defect locations on a mask blank and storing the defect types and the defect locations. The method further includes generating at least one alignment mark on the mask blank and selecting a mask pattern for the mask blank based on the defect types and the defect locations. Additionally, the method includes determining a positioning of the mask pattern on the mask blank, aligning a mask pattern generator with the mask blank in accordance with the positioning using the at least one alignment mark and forming the mask pattern on the mask blank using the mask pattern generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.