Tunable lithography with a refractive mask
US7927783B2 · kind B2 · utility
2Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Mar 16, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes exposing a first photoresist layer through a refractive mask to form a first pattern of above-threshold exposure spots in the first layer and exposing a second photoresist layer through the same mask to form a second pattern of above-threshold exposure spots in the second layer. Coordination numbers of exposure spots are larger in the first pattern than in the second pattern, nearest-neighbor pairs of the exposure spots have larger spacings in the first pattern than in the second pattern or largest ones of the exposure spots have larger diameters in the first pattern than in the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.