Method of manufacturing thin film transistor including forming a bank for ink jet printing
US7927900B2 · kind B2 · utility
1Cited by
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17Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 4, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/135
Abstract
Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.