Semiconductor memory device and method of manufacturing the same
US7927949B2 · kind B2 · utility
2Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Apr 7, 2010 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Apr 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.