Producing SOI structure using high-purity ion shower
US7927970B2 · kind B2 · utility
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14References
22Claims
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Key dates
| Filing date | Feb 11, 2009 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jul 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.