Method of making damascene diodes using sacrificial material

US7927977B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Raghuveer S. Makala · Campbell, US
• Vance Dunton · San Jose, US
• Yoichiro Tanaka · Kawasaki, JP
• Steven Maxwell · Santee, US
• Tong Zhang · Palo Alto, US
• Steven J. Radigan · Fremont, US

Key dates

• Filing date: Jul 15, 2009
• Grant date: Apr 19, 2011
• Expiry date: Dec 11, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.