Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US7927984B2 · kind B2 · utility
12Cited by
1References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 5, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jun 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/129
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.