Method for making semiconductor electrodes
US7928009B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 23, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Apr 23, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making semiconductor electrodes includes provided a wafer. The wafer includes at least one conductive unit, a plurality of first connective units connected to the conductive unit, a plurality of first metal layers connected to the first connective units and a plurality of second connective units connected to the first metal layers. Photo-resist is provided on the first and second connective units. A second metal layer is provided on each of the first metal layers via using an electroplating device. The wafer is cut through the photo-resist, thus forming semiconductor electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.