Infrared detection sensor and method of fabricating the same
US7928388B2 · kind B2 · utility
0Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Dec 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.