Nitride-based light-emitting device
US7928424B2 · kind B2 · utility
1Cited by
15References
15Claims
0Family size
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Key dates
| Filing date | Nov 13, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Feb 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.