Image sensor with improved color crosstalk
US7928478B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding to the second pixel. The second pixel is responsive to a color having a wavelength longer than the color to which the first pixel is responsive. The potential barrier is doped with dopants by a high energy ion implantation dopants or by an ion implantation or diffusion during epitaxial growth of the P-type epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.