Semiconductor memory device and manufacturing method thereof
US7928496B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Dec 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A nonvolatile semiconductor memory device having high charge retention characteristics and capable of improving leakage characteristics of a dielectric film disposed between a charge storage layer and a control gate electrode, and manufacturing method thereof is disclosed. According to one aspect, there is provided a semiconductor memory device comprising a first electrode disposed on a first insulator on a semiconductor substrate, a second insulator disposed on the first electrode, a second electrode disposed on the second insulator, and diffusion layers disposed in the semiconductor substrate, wherein the second insulator including a silicon-rich silicon nitride film containing more silicon than that in a stoichiometric silicon nitride film, and a silicon oxide film formed on the silicon-rich silicon nitride film, and wherein the silicon-rich silicon nitride film has a ratio of a silicon concentration and a nitrogen concentration set to 1:0.9 to 1:1.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.