Nano-multiplication region avalanche photodiodes and arrays
US7928533B2 · kind B2 · utility
2Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.