Semiconductor device
US7928583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Oct 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate; a sealing resin layer formed on a top face of the semiconductor substrate; a metal post formed on the top face of the semiconductor substrate such that a top face of the metal post is exposed through the sealing resin layer; a projecting electrode formed on the top face of the metal post; and a low-elasticity resin layer made of a resin material with an elasticity modulus lower than that of the sealing resin layer and formed on the top face of the sealing resin layer such that part of the low-elasticity resin layer lies between the projecting electrode and the sealing resin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.