Power semiconductor module
US7928587B2 · kind B2 · utility
7Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.