Elastic wave element containing a silicon oxide film and a silicon nitride oxide film
US7928633B2 · kind B2 · utility
1Cited by
3References
3Claims
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Key dates
| Filing date | May 9, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | May 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/0222
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.