Low power consumption MIS semiconductor device
US7928759B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2010 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | May 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.