Integrated resonating gyro accelerometer in a semiconductor substrate
US7929143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Dec 3, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated interferometric gyroscope and accelerometer device. An example device includes a cantilever beam, a package having a post connected to one end of the beam, a piezoresistor driver, a piezoresistor sensor, and a semiconductor interferometric optical gyro. The piezoresistor driver is incorporated within the beam at a first area proximate to the post. The driver electro-thermally resonates the beam. The piezoresistor sensor is incorporated within the beam at the first area. The sensor piezoresitively senses a signal that relates to an acceleration force out-of-plane of the beam. The semiconductor interferometric optical gyro is also incorporated within the beam at a second area of the beam. The gyro senses rotational motion about an axis approximately equivalent to the acceleration force out-of-plane of the beam. The gyro includes a waveguide, a laser source and a light detector. The beam is formed from a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.