Thin film capacitor
US7929272B2 · kind B2 · utility
3Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Oct 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1209
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric device having a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram ≧1.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.