Method of operating nonvolatile memory device
US7929349B2 · kind B2 · utility
8Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Apr 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/349
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.