Semiconductor devices and methods for generating light
US7929588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2009 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jul 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.