Sub-micron planar lightwave devices formed on an SOI optical platform

US7929814B2 · kind B2 · utility

Assignee

• LIGHTWIRE LLC · US

Inventors

• Prakash Gothoskar · Allentown, US
• Margaret Ghiron · Allentown, US
• Robert Keith Montgomery · Easton, US
• Vipulkumar Patel · Emmaus, US
• Kalpendu Shastri · Orefield, US
• Soham Pathak · Allentown, US
• Katherine A. Yanushefski · Emmaus, US

Key dates

• Filing date: Apr 23, 2004
• Grant date: Apr 19, 2011
• Expiry date: Apr 23, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/12173
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal.