Dry etching gas and method for dry etching
US7931820B2 · kind B2 · utility
1Cited by
30References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2001 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Sep 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.