Method for manufacturing thin film transistor
US7932138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
Abstract
A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.