Lateral oxidation with high-K dielectric liner

US7932150B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takeshi Watanabe · Nagoya, JP
• Ryosuke Iijima · Setagaya, JP

Key dates

• Filing date: May 21, 2008
• Grant date: Apr 26, 2011
• Expiry date: Jun 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Disclosed are methods of making and using a high-K dielectric liner to facilitate the lateral oxidation of a high-K gate dielectric, integrated circuit structures containing the high-K dielectric liner and/or oxidized high-K gate dielectric, and other associated methods.