Creating novel structures using deep trenching of oriented silicon substrates
US7932182B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Aug 5, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0353
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A potassium hydroxide (KOH) etch process can produce deep high aspect ratio trenches in (110) oriented silicon substrates. The trenches, however, are perpendicular to the (111) direction of the silicon substrate's crystal lattice. The trenches are used to produce thermally isolating areas and through the wafer electrical connections. These structures can be produced in a cost effective manner because of the nearly ideal capabilities of the KOH etch process when it is applied to appropriate materials at appropriate orientations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.