Methods for fabricating an electronic device
US7932186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Oct 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/464
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electronic device is provided. The method for fabricating the electrical device comprises providing a substrate. A patterned first self-assembled monolayer (SAM) and an adjacent patterned second SAM are formed on the substrate, wherein the patterned first SAM has a higher affinity then that of the patterned second SAM. A conductive, semiconductor or insulating material is dissolved or suspended in a solvent to form a solution. The solution is coated on the substrate. The solvent in the solution is removed to selectively form a patterned conductive, semiconductor or insulating layer on the patterned first SAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.