Infrared detector, infrared detecting apparatus, and method of manufacturing infrared detector
US7932496B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 29, 2009 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion. The reflection portion, the photo-current generating portion, and the light emitting portion are made of group III-V compound semiconductors layered on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.