Power rectifiers and method of making same

US7932536B2 · kind B2 · utility

Assignee

• Diodes Incorporated · US

Inventors

• Roman Hamerski · Olathe, US
• Jonathan Moult · Lee's Summit, US
• Timothy S. Eastman · Lee's Summit, US

Key dates

• Filing date: Sep 10, 2008
• Grant date: Apr 26, 2011
• Expiry date: Apr 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.