Image sensor having microlenses and high photosensitivity
US7932546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2009 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.