Patent · US Active

Method of producing a porous semiconductor film on a substrate

US7935263B2 · kind B2 · utility

3Cited by

2References

56Claims

0Family size

Assignee

Sony Deutschland GmbH · DE

Inventors

Michael Duerr · Mannheim, DE
Andreas Schmid · Duisburg, DE
Gabriele Nelles · Stuttgart, DE
Akio Yasuda · Eßlingen, DE

Key dates

Filing date	Jan 17, 2005
Grant date	May 3, 2011
Priority date	—
Expiry date	Aug 9, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The invention relates to a method of producing a porous semiconductor film and the film resulting from such production. It furthermore relates to an electronic device incorporating such film and to potential uses of such film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.