Embossing printing for fabrication of organic field effect transistors and its integrated devices

US7935566B2 · kind B2 · utility

Assignee

• Nanyang Technological University · SG

Inventors

• Chang Ming Li · Chongqing, CN
• Mary Bee Eng Chan · Singapore, SG
• Jun Zhang · Xi'an, CN

Key dates

• Filing date: May 14, 2008
• Grant date: May 3, 2011
• Expiry date: May 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/82

Abstract

A method of fabricating an organic field effect transistor (OFET) includes forming at least one OFET structure by ultraviolet (UV) transfer embossing printing, where, in an example embodiment, the method includes providing ink material on at least part of a patterned surface of a mold, where the mold 100 is then contacted on a coating of ultraviolet (UV) curable resin on a substrate so as to insert at least part of the ink material into the resin, the resin is then irradiated with UV light, and the mold is separated from the resin so as to transfer the ink material onto the substrate to form at least one OFET structure.