Storage cell having a T-shaped gate electrode and method for manufacturing the same

US7935608B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Frank Heinrichsdorff · Teltow, DE
• Nicolas Nagel · Yokohama, JP
• Jens-Uwe Sachse · Dresden, DE
• Andreas Voerckel · Finkenstein, AT
• Dominik Olligs · Dresden, DE
• Torsten Mueller · Zirndorf, DE

Key dates

• Filing date: Jun 2, 2008
• Grant date: May 3, 2011
• Expiry date: Jul 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method for manufacturing an integrated circuit including at least one storage cell is provided. The method includes providing a substrate having a first and second side, and a plurality of parallel trenches so that a dividing wall is formed between adjacent trenches, filling the trenches with an insulating compound, providing a first insulating layer having a first and second side on the top surface of the dividing wall, wherein the first side is arranged on the substrate's first side, providing a first conductive layer having a first and second side, wherein the first side is arranged on the insulating layer's second side, wherein the conductive layer protrudes from the substrate surface, providing a second conductive layer having a first and second side, wherein the first side is located on the first conductive layer's second side, and removing parts of the second conductive layer by an anisotropic etching means.