Dynamic p-n junction growth
US7935616B2 · kind B2 · utility
13Cited by
33References
9Claims
0Family size
Inventors
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jul 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.