Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US7935941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Mar 15, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K26/067
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.