Artificial band gap
US7935954B2 · kind B2 · utility
0Cited by
42References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2006 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Mar 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/81
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.