Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method
US7935989B2 · kind B2 · utility
2Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | May 21, 2004 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Apr 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.