Semiconductor device including a fin field effect transistor and method of manufacturing the same
US7936021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2007 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
In a fin field effect transistor (Fin FET) and a method of manufacturing the Fin FET, the Fin FET includes an active pattern inside which insulating layer patterns are formed, an isolation layer pattern enclosing a sidewall of the active pattern such that an opening exposing a sidewall of the active pattern located between the insulating layer patterns is formed, a gate electrode formed on the active pattern to fill the opening, impurity regions formed at portions of the active pattern adjacent to sidewalls of the gate electrode, an insulating interlayer covering the active pattern and the gate electrode and contact plugs formed through portions of the insulating interlayer and the active pattern adjacent to the sidewalls of the gate electrode such that the contact plug makes contact with the impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.