Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same
US7936038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2009 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | May 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/011
Abstract
Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.