Patent · US Active

Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same

US7936038B2 · kind B2 · utility

33Cited by
1References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 12, 2009
Grant dateMay 3, 2011
Priority date
Expiry dateMay 12, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/011

Abstract

Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.