Backside illuminated CMOS image sensor with photo gate pixel
US7936039B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 20, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Oct 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel for a CMOS photo sensor with increased full well capacity is disclosed. The pixel having a photosensitive element, a photo gate, potential well and a readout circuit. The photosensitive element having a front side and a back side, for releasing charge when light strikes the back side of the photosensitive element. The potential well receives the released charge from the photosensitive element. The photo gate located on the front side of the photosensitive element, for transferring the released charge from the potential well to a sense node. The readout circuit coupled to the sense node, for measuring a voltage corresponding to the released charge transferred to the sense node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.