Integrated passive device substrates
US7936043B2 · kind B2 · utility
3Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2006 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Apr 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.