Patent · US Active

Multilevel magnetic storage device

US7936597B2 · kind B2 · utility

37Cited by
33References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 2008
Grant dateMay 3, 2011
Priority date
Expiry dateSep 1, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/935
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.