Multilevel magnetic storage device
US7936597B2 · kind B2 · utility
37Cited by
33References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Sep 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.