Nonvolatile semiconductor memory device
US7936617B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | May 16, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a nonvolatile semiconductor memory device which can enhance a stable control of a voltage applied to a memory cell and has excellent capability of controlling a drain voltage. The nonvolatile semiconductor memory device includes: a plurality of memory cells; a write buffer receiving data to be written to the plurality of memory cells; a count circuit searching data input to the write buffer and determining bit number of data to be simultaneously programmed to the plurality of memory cells; a write circuit supplying a write voltage to the plurality of memory cells according to the data; and a voltage regulator supplying a control voltage (Vpb) to the write circuit, wherein the voltage regulator includes a controller Counting write bit number and supplying the control voltage (Vpb) according to the counted write bit number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.