Patent · US Active

External cavity semiconductor laser

US7936803B2 · kind B2 · utility

0Cited by
5References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 24, 2006
Grant dateMay 3, 2011
Priority date
Expiry dateSep 19, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/2036
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An external cavity semiconductor laser including a first and second input-output section disposed on a common end surface via a center axis, and a semiconductor laser device emitting a first and second laser light from the first and second input-output sections in two directions. The laser device includes a first reflecting unit for reflecting the first laser light emitted from the first input-output section and returning the reflected first laser light to the first input-output section, a second reflecting unit for reflecting the second laser light emitted from the second input-output section and returning the reflected second laser light to the second input-output section, a third reflecting unit provided to a second end surface disposed opposite a first end surface having first and second input-output sections for reflecting laser light returned to one of the input-output sections so as to be emitted from the other one of the input-output sections.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.