Patent · US Active

Photomask, semiconductor device, and method for manufacturing semiconductor device

US7939229B2 · kind B2 · utility

3Cited by

3References

9Claims

0Family size

Assignee

SEIKO EPSON CORPORATION · JP

Inventors

Hiroshi Sera · Chino, JP
Takashi Miyata · Tokyo, JP

Key dates

Filing date	Oct 2, 2008
Grant date	May 10, 2011
Priority date	—
Expiry date	Mar 28, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photomask includes a light-blocking section that blocks light and also includes a light intensity difference section that controls the intensity of light. The light-blocking section is disposed between the light intensity difference section and a light-transmissive region transmitting light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.